acpl-214 ac input, half-pitch phototransistor optocoupler data sheet description the acpl-214 is an ac-input single channel half-pitch phototransistor optocoupler which contains 2 light emitting diodes connected inversely parallel & optically coupled to a phototransistor. it is packaged in a 4-pin so package. the input-output isolation voltage is rated at 3000 vrms. response time, tr, is 2s typically, while minimum ctr is 20% at input current of 1 ma acpl-214 pin layout features ? current transfer ratio (ctr: 20% (min) at i f = 1ma, v cc = 5v) ? high input-output isolation voltage (v iso = 3,000v rms ) ? non-saturated response time (tr: 2s (typ) at v cc = 10v, i c = 2ma, r l = 100 w ) ? so package ? cmr 10kv/s (typical) ? safety and regulatory approvals - ul - csa - iec/en/din en 60747-5-2 ? options available: C ctr ranks 0, a applications ? i/o interface for programmable controllers, computers. ? sequence controllers ? system appliances, measuring instruments ? signal transmission between circuits of diferent potentials and impedances. lead (pb) free rohs 6 fully compliant rohs 6 fully compliant options available; -xxxe denotes a lead-free product 1 2 4 3 1 2 4 3 ? pin 1 anode ? pin 2 cathode ? pin 3 emitter ? pin 4 collector
ordering information acpl-214-xxxx is pending ul recognition with 3000 vrms for 1 minute per ul1577 and is pending approval under csa component acceptance notice #5, file ca 88324. part number rohs compliant option package surface mount tape & reel ic orientation iec/en/din en 60747-5-2 quantity rank 0 20%ACPL-214-50AE to order product of so-4 surface mount package in tape & reel packaging with 50% solder refow temperature profle note: non halide fux should be used. 30 seconds 60 ~ 150 sec 90 sec 60 sec 60 sec 25 c 150 c 200 c 250 c 260 c (peak temperature) 217 c time (sec) temperature ( c) absolute maximum ratings parameter symbol acpl-214 units note storage temperature t s -55~125 c operating temperature t a -55~110 c average forward current i f(avg) 50 ma pulse forward current i fsm 1 a led power dissipation p i 65 mw collector current i c 50 ma collector-emitter voltage v ceo 80 v emitter-collector voltage v eco 7 v isolation voltage (ac for 1min, r.h. 40~60%) v iso 3000 v rms 1min collector power dissipation p c 150 mw total power dissipation p tot 200 mw lead solder temperature 260 c for 10 sec., 1.6 mm below seating plane 1. one-time soldering refow is recommended within the condition of temperature and time profle shown at right. 2. when using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. keep the temperature on the package of the device within the condition of (1) above.
electrical specifcations over recommended ambient temperature at 25oc unless otherwise specifed. parameter symbol min. typ. max. units test conditions note forward voltage v f - 1.2 1.4 v i f = 20ma fig.6 terminal capacitance c t - 60 - pf v = 0, f = 1mhz collector dark current i ceo - - 100 na v ce = 48v, i f = 0 ma fig.12 collector-emitter breakdown voltage bv ceo 80 - - v i c = 0.5 ma, i f = 0 ma emitter-collector breakdown voltage bv eco 7 - - v i e = 100 m a, i f = 0 ma current transfer ratio ctr 20 - 400 % i f = 1 ma, v ce = 5v ctr=(i c /i f )x 100% saturated ctr ctr (sat) - 100 - % i f = 1ma, v ce = 0.4v collector-emitter saturation voltage v ce (sat) - - 0.4 v i f = 8ma, i c = 2.4ma fig.14 isolation resistance riso 5x10 10 1x10 11 - w dc500v, r.h. 40~60% floating capacitance c f - 0.8 1 pf v = 0, f = 1mhz cut-of frequency (-3db) f c - 80 - khz v cc = 5v, i c = 2 ma, r l = 100 w fig. 2,19 response time (rise) t r - 2 - m s v cc = 10v, i c = 2 ma, r l = 100 w fig. 1 response time (fall) t f - 3 - m s turn-on time t on - 3 - m s turn-of time t of - 3 - m s turn-on time t on - 2 - m s vcc = 5v, i f = 16 ma, r l = 1.9k w fig. 1, 17 storage time t s - 25 - m s turn-off time t off - 40 - m s common mode rejection voltage cmr - 10 - kv/ m s ta=25oc, r l =470 w , v cm =1.5kv(peak), i f =0ma, v cc =9v, v np =100mv fig.20 figure 1. switching time test circuit i f r l v cc v ce i f v ce t on t of f 90 % 10 % t r t f t s i f v ce t on t of f 90 % 10 % t r t f t s r l v cc output r d figure 2. frequency response test circuit
figure 3. forward current vs. ambient temperature figure 4. collector power dissipation vs. ambient temperature figure 5. pulse forward current vs. duty cycle ratio figure 6. forward current vs. forward voltage figure 7. forward voltage temperature coefcient vs. forward current figure 8. pulse forward current vs. pulse forward voltage 0 10 20 30 40 50 60 -25 -5 15 35 55 75 95 115 forward current, i f (ma) ambient temperature, ta( oc ) acpl-214 0 20 40 60 80 100 120 140 160 -25 0 2 5 5 0 7 5 100 125 collector power dissipation, pc(mw) ambient temperature, ta( oc ) acpl-214 10 100 1000 10000 0.0001 0.0010 0.0100 0.1000 1.0000 peak forward current, i fp (ma) duty ratio pulse width 100 s ta = 25 o c 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 forward current, i f (ma) forward voltage, v f (v) ta = 110 o c 7 5 o c 50 o c 25 o c 0 o c -30 o c -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 1 1 0 100 forward current, i f (ma) ? v f / ? ta (mv/ o c ) forward voltage temperature coefficient 1 10 100 1000 0.5 1 1.5 2 2.5 3 pulse forward voltage, v fp (v) pulse forward current, i fp (ma) pulse width 10 s repetitive frequency=100hz ta=25oc
figure 9. collector current vs. collector-emitter voltage figure 10. collector current vs. small collector?-emitter voltage figure 11. collector current vs. forward current figure 12. collector dark current vs. ambient temperature figure 13. current transfer ratio vs. forward current figure 14. collector-emitter saturation voltage vs. ambient temperature 0 10 20 30 40 50 0 5 10 collector current, ic(ma) collector-emitter voltage, vce(v) 10ma 30ma t a = 25 oc p c (max)=150mw i f =5ma 20ma 50ma 0 5 10 15 20 25 30 35 40 45 50 0 0.5 1 collector-emitter voltage, v ce (v) collector currrent, ic( ma) i f = 2ma 5ma 10ma 20ma 30ma 50ma 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 forward current, i f (a) collector current, i c (a) v ce = 0.4v 5v 10v 1.e-10 1.e-08 1.e-06 -25 -5 15 35 55 75 95 ambient temperature, t a ( o c) collector dark current, i ceo (a) v ce = 48v 24v 10v 5v 10 100 1000 0.0001 0.001 0.01 0.1 forward current, i f (a) current transfer ratio, ctr (%) v ce = 0.4v 5v 10v 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 -30 5 4 0 7 5 110 collector-emitter saturation voltage, v ce (sat) (v) ambient temperature, ta( oc ) i f = 20ma, i c = 1ma i f = 1ma, i c = 0.2ma i f = 8ma, i = 2.4ma c
figure 15. collector current vs. ambient temperature figure 16. switching time vs. load resistance figure 17. switching time vs. ambient temperature figure 18. collector-emitter saturation voltage vs. forward current figure 19. frequency response figure 20. cmr test circuit 0.1 1 10 100 -25 0 2 5 5 0 7 5 100 ambient temperature, ta ( o c) collector current, i c (ma) 1ma 10ma 25ma 5ma i f = 0.5ma 0.1 1 10 100 1000 1 1 0 100 switching time, t ( s) load resistance, r l (k ? ) ta = 25 oc v cc = 5v r l = 1.9 k ? t on t off t s 0.1 1 10 100 -20 0 2 0 4 0 6 0 8 0 100 ambient temperature, ta ( oc ) switching time, t ( s ) t on t s i f = 16ma v cc = 5v r l = 1.9k ? t off 0 1 2 3 4 5 0 5 10 15 20 forward current, i f (ma) collector-emitter saturation voltage, v ce(sat) (v) i c = 10ma 7ma 5m a 3ma 1ma 0.5ma ta = 25 oc vo r l vc c v cm v cm dv /d t vo v cp v np 470 ? 9v (h igh vo lt age pulse ) v cp : v ol ta ge t ha t is g en erate d b y th e displa ce me nt cu rre nt in fl oati ng c ap ac it an ce b etween pr im ary an d se co nd ary side s. v cp (dv/dt)xc f xr l -8 -6 -4 -2 0 1 1 0 100 frequency, f (khz) v cc = 5v i c = 2ma t a = 25 oc vo, (db) r l = 100 ? 1k ? for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 00- 008 avago technologies. all rights reserved. av0 -0 9en - september 1, 008
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